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PHOTOMULTIPLIER TUBES
R2658 R2658P (For Photon Counting)
High QE in Near IR Region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared Region, etc.
FEATURES
High QE in Near IR Region ............................... QE 0.13% at 1 m Wide Wavelength Range ....................................... 185 to 1010 nm Low Dark Current .......................................... 1 nA at 1250 V (Typ.)
The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photocathode, and yet offers low dark current. The dark current is 2 orders lower than the commercial S-1 photocathode. Therefore, they are well suited for low light detection in the near IR region including fluorescence lifetime measurements. Time response, gain, and dimensions are identical with the conventional 28 mm (1-1/8 inch) diameter side-on tubes with a GaAs photocathode. The R2658P is a photon counting version of the R2658 with low dark counts.
GENERAL
Parameter Spectral Response Wavelength of Maximum Response Photocathode Material Minimum Effective Area Secondary Emitting Surface Dynode
Direct Interelectrode Capacitances
Figure 1: Typical Spectral Response
Description/Value Unit 185 to 1010 400 InGaAs (Cs) 3 x 12 UV glass Cu-BeO Circular-cage 9 Approx. 4 Approx. 6 11-pin base JEDEC No. B11-88 Approx. 45 E678-11A E717-63 nm -- mm -- -- -- -- pF pF -- g -- --
0.01 100 200 300 400 500 600 700 800 900 1000 1100
TPMSB0150EA
100 CATHODE RADIANT SENSITIVITY
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
nm
10
Window Material Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes
QUANTUM EFFICIENCY 1
Base Weight Suitable Socket (Option) Suitable Socket Assembly (Option)
0.1
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 2000 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R2658, R2658P
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Value 1500 250 1 -80 to +50 Unit Vdc Vdc A C
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/white ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below.
Average Anode Current A Ambient Temperature
CHARACTERISTICS (at 25C)
Parameter Quantum at 330 nm Efficiency at 1000 nm Luminous Cathode Sensitivity Radiant
B
Min. -- 0.02 50 -- -- -- -- -- 0.16 0.25 5 -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ. 14 0.13 100 20 23 40 19 7.6 1 0.4 16 3.2 x 3.7 x 6.4 x 3.0 x 1.2 x 1.6 x 1 50 1.1 x 10-15 2.0 20 2 2 103 103 103 103 103 105
Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 300 -- -- -- -- --
Unit % % A/lm mA/W mA/W mA/W mA/W mA/W mA/W -- A/lm A/W A/W A/W A/W A/W A/W -- nA s-1(cps) W ns ns % %
E: Measured with the same supply voltage and the voltage distribution ratio as Note D after 30 minute storage in the darkness. F: Measured at the voltage producing the gain of 1 x 106 and the voltage distribution ratio shown in table 1 below. The photocathode is cooled at -20 C. G: ENI is an indication of the photo-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = 2q*ldb*G*f S
at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm at 1000 nm Red/White Ratio C Luminous D at 194 nm Anode Sensitivity at 254 nm Radiant at 400 nm at 633 nm at 852 nm at 1000 nm Gain
D
where q = Electronic charge (1.60 x 10-19 coulomb) ldb = Anode dark current (after 30 minute storage) in amperes G = Gain f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
1.6 x 102
Anode Dark Current E After 30 minute storage in the darkness Anode Dark Count (for the R2658P) F ENI (Equivalent Noise Input) G Time Response
D
K. Hysteresis is temporary instability in anode current after light and voltage are applied.
Anode Pulse Rise Time H Electron Transit Time J Voltage Hysteresis
Anode Current Current Hysteresis Stability
K
Table 1: Voltage Distribution Ratio
Electrodes Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
Supply Voltage= 1250 Vdc K: Cathode, Dy: Dynode, P: Anode
Figure 2: Anode Luminous Sensitivity and Gain Characteristics
TPMSB0151EB
Figure 3: Typical Time Response
TPMSB0152EA
103
106
200
ANODE LUMINOUS SENSITIVITY (A/lm)
102
105
100 80 60
101
TIME (ns)
TY
100
C PI
AL
G
AI
N S EN IT I
T VI
Y
104
40
T
10-1
I YP
L CA
AN
M
IN
IM
UM
A
NO
DE
SE
103
GAIN
O
DE
S
I NS
V TI
Y IT
20
TRAN
SIT TIM
E
10 8 6 4
102
RISE
10-2 101 2
TIME
10-3 500
700
1000
1500
100 2000
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Temperature Coefficient
TPMSB0153EA
Figure 5: Typical Temperature Characteristic of Dark Current and Dark Count (R2658P)
TPMSB0154EB
0.8 0.6
10-6
106
TEMPERATURE COEFFICIENT (%/C)
0.4
10-7
105
ANODE DARK CURRENT (A)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
10-8
R2 65
8P
0.2
104
RK
10-10
DA RK
10-9
103
102
10-11
101
400
500
600
700
800
900
1000
10-12 -20
0
20
40
100 60
WAVELENGTH (nm)
TEMPERATURE (C)
ANODE DARK COUNT [s-1(cps)]
F
T
CO
DA
CU
RR E
UN
NT
O
PHOTOMULTIPLIER TUBES R2658, R2658P
Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)
T9 BULB PHOTOCATHODE DY5 DY4 4 80MAX. DY3 3 94MAX. DY2 2 1 11 K DY6 6 DY7 8 DY8 9 DY9 10 P 28.5 1.5 3MIN.
5 7 8 9 ANODE SHIELD GRILL 6 4 2 1 BULB PHOTOCATHODE DIRECTION OF LIGHT 3 1 to 9: DYNODES
5
7
12MIN.
49.0 2.5
DY1
DIRECTION OF LIGHT
32.2 0.5 11 PIN BASE JEDEC No. B11-88
Detail of Tube (Cross Section of Top View)
TPMSA0012EC TPMSC0040EA
Figure 7: Optional Accessories (Unit: mm) (a) E678-11A (Socket)
49 38
(a) E717-63 (Socket Assembly)
PMT 5 3.5 33.0 0.3 P R10 DY9 DY8 38.0 0.3 49.0 0.3 DY7 DY6 29 7 R7 6 5 4 R4 30 +0 -1 31.0 0.5 HOUSING (INSULATOR) 450 10 DY3 DY2 DY1 K 3 R3 2 R2 1 R1 11 -HV AWG22 (VIOLET)
TACCA0002EG
SOCKET PIN No. 10
33
C3 C2 C1
SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK)
3.5
9 R9 8 R8
5
29
4
DY5 DY4
R6 R to R10 : 330k C1 to C3 : 0.01F R5
TACCA0064EA
18
4
POTTING COMPOUND
Warning-Personal Safety Hazards Electrical Shock -- Operating voltage applied to this device presents shock hazard.
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
TPMS1044E02 MAR. 2000

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